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June 15, 1978Applied Physics Letters

Unidirectional contraction in boron-implanted laser-annealed silicon

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Authors

BLB. C. LarsonProtochips (United States)CWC. W. WhiteColorado School of MinesBAB. R. AppletonNew York Law School

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Larson et al. (1978) studied this question.

synapsesocial.com/papers/6a7e52aa760ccf6bd0991011https://doi.org/10.1063/1.89936
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  1. 1Conditions for the Generation of Slip by Diffusion of Phosphorus into Silicon1966 · 33 citations
  2. 2Determination of strain distributions from X-ray Bragg reflexion by silicon single crystals1977 · 133 citations
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  4. 4Laser annealing of boron-implanted silicon1978 · 224 citations
  5. 5Diffusion of Boron from Shallow Ion Implants in Silicon1972 · 86 citations