We study the relation between surface reconstruction transitions and surface kinetics for cubic GaN grown by plasma-assisted molecular-beam epitaxy on (001) GaAs. Reflection high-energy electron diffraction is used to monitor the transient behavior of the surface reconstruction upon the pulsed supply of either Ga or N at a given substrate temperature. We develop a model of the adsorption-diffusion-desorption kinetics of Ga and N adatoms to understand the dynamics of the surface reconstruction transitions quantitatively. Our results show that the surfaces phases of GaN constitute kinetic barriers for the decomposition of GaN, being of either energetic and entropic character depending on surface termination. {} 1996 The American Physical Society.
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Brandt et al. (1996) studied this question.
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