Epitaxial growth of SimGen/Si(001) strained-layer superlattices by magnetron sputter epitaxy is reported. Films of excellent crystal quality resulted from low-temperature sputter growth at TS=350 °C, as is evidenced by Rutherford backscattering spectrometry minimum channeling yields χmin=3%. The absence of relaxation was demonstrated by Raman spectroscopy. Raman results on the first-order longitudinal-optical Ge–Ge phonon proved pure Ge to be present in a Si30Ge6 superlattice, which indicates an interface broadening of the order of 2 monolayers. High resolution transmission electron microscopy confirmed the formation of smooth and well-defined interfaces between subsequent Si and Ge layers.
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Sutter et al. (1994) studied this question.
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