Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
February 15, 1991Journal of Applied PhysicsOpen Access

Study on further reducing the epitaxial silicon temperature down to 250 °C in low-energy bias sputtering

View Full Paper
Ask AI
Bookmark
Share

Authors

TOTadahiro OhmiTohoku Institute of TechnologyKHKeiichi HashimotoTohoku UniversityMMMakoto MoritaJikei University School of Medicine

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Ohmi et al. (1991) studied this question.

synapsesocial.com/papers/6a9019306e7e048e0989cc61https://doi.org/10.1063/1.348732
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle Bombardment1988 · 12 citations
  2. 2Gas-phase selective etching of native oxide1990 · 81 citations
  3. 3High-rate growth at low temperatures by free-jet molecular flow: Surface-reaction film-formation technology1988 · 20 citations
  4. 4Formation of High Quality Pure Aluminum Films by Low Kinetic Energy Particle Bombardment1990 · 35 citations
  5. 5Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter deposition1986 · 46 citations