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January 12, 1987Applied Physics Letters

Nonequilibrium boron doping effects in low-temperature epitaxial silicon films

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BMB.S. MeyersonJohannes Kepler University of LinzFLF. K. LeGouesIBM Research - Thomas J. Watson Research CenterTNT.N. NguyenVietnam National University Ho Chi Minh City

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Meyerson et al. (1987) studied this question.

synapsesocial.com/papers/6a71be32e36a167817e375afhttps://doi.org/10.1063/1.98255
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