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January 1, 1986Japanese Journal of Applied PhysicsOpen Access

Si(001)-2×1 Single-Domain Structure Obtained by High Temperature Annealing

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Authors

TSTsunenori SakamotoElectrotechnical InstituteGHGen HashiguchiShizuoka University

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Sakamoto et al. (1986) studied this question.

synapsesocial.com/papers/6a82acee8ddd99b9b523a5b7https://doi.org/10.1143/jjap.25.l78
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