Low-Loss High-Performance Base-Drive Unit for SiC BJTs

Driving a silicon carbide bipolar junction transistor is not a trivial issue, if low drive power consumption and short-switching times are desired. A dual-source base-drive unit with a speed-up capacitor consisting of a low- and a high-voltage source is, therefore, proposed in this paper. As a significant base current is required during the conduction state, the driver power consumption is higher than for other semiconductor switches. In the presented solution, the steady-state base current is provided by a low-voltage source and is optimized for lowpower losses. On the contrary, a second source with a higher voltage and speed-up capacitor is used in order to improve the switching performance of the device. The proposed driver has experimentally been compared to other standard driver solutions by using a double-pulse circuit and a 2-kW dc/dc boost converter. Switching times of 20 ns at turn-ON and 35 ns at turn-OFF were recorded. Finally, the efficiency of the converter was determined experimentally at various switching frequencies. From power loss measurements at 100-kHz switching frequency using the proposed driver in a 2-kW dc/dc boost converter, it was found that the efficiency was approximately 99.0%. In the same operating point, the driver power consumption was only 0.08% of the rated power.