Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC

In this paper, a high voltage normally-off trenched-and-implanted vertical JFET (TIVJFET) in 4H-SiC is investigated by way of two-dimensional numerical simulations. The structure is simple to fabricate and is expected to be able to achieve a high current density. Detailed designs are presented for 1.7kV to 14kV normally-off 4H-SiC VJFETs. A good agreement has been reached between computer modeling and experimental 1.7kV normally-off TI-VJFET in 4H-SiC. The fabricated 1.7kV device shows a VB 2 /Ron,sp value of 827MW/cm 2 at room temperature, which represents a substantial performance improvement to the state-of-the-art.