The authors report photoluminescence (PL) measurement on a series of Si∕SiGe quantum-well structures that had different internal strain distributions. When each sample was placed in a high magnetic field, the field-dependent energy shift of the relevant PL peaks revealed either type-I or type-II exciton formation depending on the strain distribution. This observation is in agreement with theoretical modeling. The present investigation shows that type-I band alignment—desired for electroluminescent devices—can be achieved by strain engineering.
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Wang et al. (2007) studied this question.
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