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We report a technique for modulating the strain of SiGe∕Si virtual substrate by incorporating boron into the Si layer to change its lattice constant. The analysis of Raman measurement shows that the degree of strain relaxation in the SiGe layer increases with the dopant concentration as a result of the lattice contraction in the boron-doped Si layer that produces increased lattice mismatch at the SiGe∕Si interface.
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Tan et al. (2006) studied this question.
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