We report here 20-kV-class small-area (0.035 mm2) 4H-SiC bipolar junction transistors. We implemented edge termination techniques featuring two-zone junction termination extension and space-modulated rings. On-state characteristics showed a current gain of 63 and a specific on-resistance of 321 mΩ·cm2, which is slightly below the SiC unipolar limit. We achieved the open-base blocking voltage of 21 kV at a leakage current of 0.1 mA/cm2, which is the highest blocking voltage among any semiconductor switching devices.
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Miyake et al. (2012) studied this question.
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