Demonstration of Common–Emitter Operation in AlGaN/SiC Heterojunction Bipolar Transistors

We report here on the fabrication and characterization of new aluminum gallium nitride (AlGaN)/silicon carbide heterojunction bipolar transistors (HBTs). In the HBTs, AlN/GaN short-period superlattice (quasi-AlGaN) was employed as the widegap emitter. We have successfully demonstrated band-offset control and the first common-emitter-mode operation (β ~ 2.7) in the HBTs.