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April 28, 2008IEEE Transactions on Electron Devices

A Comparison of the Performance and Stability of ZnO-TFTs With Silicon Dioxide and Nitride as Gate Insulators

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Authors

RCRichard CrossDe Montfort UniversityMSM.M. De SouzaEnvironmental Education ExchangeSDS. C. DeanePhilips (Finland)

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Cross et al. (2008) studied this question.

synapsesocial.com/papers/6a82bfa7061372775e6d11d4https://doi.org/10.1109/ted.2008.918662
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