A fullerene field-effect transistor (FET) device has been fabricated with thin films of C88, and n-channel normally on depletion-type FET properties have been found in this FET device. The C88 FET exhibited a high mobility, μ, of 2.5×10−3cm2V−1s−1 at 300 K, in fullerene FETs. The carrier transport showed a thermally activated hopping transport. The n-channel normally on FET properties and the hopping transport reflect the small mobility gap and low carrier concentration in the channel region of C88 thin films.
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Nagano et al. (2005) studied this question.
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