The diffusion profiles of the heavily ion-implanted arsenic (As) in silicon by short annealing time were examined by Hall effect measurements in conjunction with anodization and layer removal. The arsenic diffusion profiles obtained by computer simulation were compared with the measured results. It is shown by this comparison that the diffusion of the arsenic atoms is enhanced at an early stage of annealing.
No takes yet. Share an insight, caveat, or question.
Sasaki et al. (1989) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: