Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes

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We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of −30 °C we achieve a detection efficiency of 9.3%, a dark count probability of 2.8×10−6 ns−1, while the afterpulse probability is 1.6×10−4 ns−1, with a 10 ns “count-off time” setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.