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September 1, 1977Journal of the Physical Society of Japan

Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si I. Formulation by Extended Zone Effective Mass Theory

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FOFusayoshi J. OhkawaHokkaido University of ScienceYUYasutada UemuraTokyo University of Science

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Ohkawa et al. (1977) studied this question.

synapsesocial.com/papers/6a82d1ade41271e79b8d62e4https://doi.org/10.1143/jpsj.43.907
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  1. 1Theory of Valley Splitting in anN-Channel (100) Inversion Layer of Si II. Electric Break Through1977 · 74 citations
  2. 2Effect of Stress on the Donor Wave Functions in Germanium1962 · 139 citations
  3. 3Motion of Electrons and Holes in Perturbed Periodic Fields1955 · 3,092 citations
  4. 4Theory of Valley Splitting in an N-Channel (100) Inversion Layer of Si III. Enhancement of Splittings by Many-Body Effects1977 · 73 citations
  5. 5The Effective Mass Equation for the Multi-Valley Semiconductors1976 · 77 citations