Nanotechnology study demonstrates gate-tunable quaternary layer Hall states in multiferroic antiferromagnetic quadrilayers, indicating promising potential for multi-state electronic devices.
We introduce quadri-layertronics, wherein the layer Hall effect is engineered into a quaternary mode by manipulating interlayer dipoles via gate voltage in antiferromagnetic multiferroic quadrilayers, enabling selective Hall effect control.
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Wang et al. (2025) studied this question.
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