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We present a semiconductor gas sensor based on mesoporous In 2 O 3 (m-In 2 O 3 ). The m-In 2 O 3 was successfully fabricated by a simple sol-gel process, using block copolymer PE6800 as a soft template. The results of gas sensing reveal that the m-In 2 O 3 prepared at room temperature shows higher resistance, which plays the key role in its greater sensitivity. The pore structure of material has an influence on gas adsorption on the material surface, which further affects response-recovery time of gas sensor.
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Cheng et al. (2011) studied this question.
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