Electrical characterizations of single (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the nanowire were measured to be and , respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices.
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Karthik et al. (2010) studied this question.
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