The dark and photoconductivity of a-Si:H was measured after in- and out-diffusion of hydrogen. The results agreed with the expected variations in the density of uncompensated dangling bonds. Secondary-ion mass spectrometry profiles confirmed the changes in hydrogen concentration. Samples doped with phosphorus behaved differently from undoped samples. Annealing above 400 °C quenched the optically induced conductivity changes found in a-Si:H.
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Staebler et al. (1980) studied this question.
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