Evaluation of Photodetection Properties of Graphene-Silicon Schottky IR Detector

We evaluated the photodetection properties and external quantum efficiency of graphene-silicon Schottky photodetector under IR illumination for 700 nm, 1.1 μm, 2 μm, and 3.5 μm wavelengths at room temperature. The graphene-Si Schottky diode has been fabricated by depositing mechanically exfoliated HOPG on top of the pre-patterned silicon substrate. Finally, the measurements were done on the (I-V) curves of the junction to calculate photocurrent at low voltage which is of the great practical interest. We show that our graphene-Si Schottky detector can detect the IR illuminations at lower voltages than previously published work.