Pt and PtSix Schottky contacts on n-type β-SiC

Schottky barrier rectifying contacts using e-beam-deposited platinum have been demonstrated on n-type β-SiC. The electrical properties of these contacts were examined as a function of annealing temperature using I-V and C-V measurements. Auger analysis was used to study the metallurgical reactions at the Pt/SiC interface. Short annealing cycles in the 350–800 °C temperature range led to formation of a mixed structure of PtSix and PtC at the interface, evidenced by migration of platinum into the SiC above 350 °C. The barrier height was found to increase from 0.95 to 1.35 eV with increasing annealing temperature. The rectifying characteristics improved following an initial 350 °C anneal and remained relatively stable up to 800 °C.