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Effects of postannealing in oxygen ambient on the leakage properties of sputter-deposited (Ba, Sr)TiO 3 (BST) thin-film capacitors with Pt electrodes are investigated as a function of oxygen gas pressure, postannealing temperature and postannealing time. It is shown that the leakage properties can be improved by increasing these conditions. By comparing the leakage behavior with a Schottky emission model, it is concluded that the main effect of postannealing is an increase in the Pt/BST Schottky barrier height. It is also shown that the Fermi level of the BST film may be pinned at the Pt/BST interface because of oxygen vacancies in the film.
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Fukuda et al. (1998) studied this question.
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