The Raman scattering efficiencies for Г phonons have been measured for Gap, ZnTe, ZnSe, ZnS, CAF2, SrF2and BAF2, using the Brillouin-Raman method. The results are used to calibrate resonance Raman curves previously published for Gap, ZnTe, ZnSe and ZnS. In this case a theoretical treatment of the data based on a parabolic-band model yields values of the deformation potential d o which are compared with other data. For the fluorite-type materials the scattering efficiency is attributed to electron-phonon coupling to the edge exciton. This analysis yields a deformation potential of the Г15valence band, also abelled d o. The results are compared with pseudopotential and LCAO calculations.
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Calleja et al. (1982) studied this question.
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