The potential of high-speed optical memories using electro-optic or acousto-optic light deflection for address selection is examined. It is shown that for such memories the total memory capacity decreases as the third power of the addressing rate and that capacities in excess of 108bits are feasible with a random access rate of 106addresses/sec. A specific semipermanent memory design is then described which uses a laser light source, an acoustic xy light deflector and an array of 104holograms as information storage elements. Each storage element contains 104bits which appear as a pattern on a semiconductor read-out matrix when the storage element is illuminated through the xy deflector. Accordingly, the system has a total capacity of 108bits with an access time of less than 10 μsec.
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Smits et al. (1967) studied this question.
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