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GaAs/Al x Ga 1- x As multilayer reflectors (MLRs) were fabricated for the cavity mirrors of a surface emitting laser diode by using MBE technique. Absolute reflectivity of the fabricated MLR with 20 repetition pairs of GaAs–Al 0.5 Ga 0.5 As reaches 0.94. This means 18 times lower cavity loss than GaAs-air interface when used as cavity mirrors. Good agreement of the reflectivity between theory and experiments is demonstrated.
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Ogura et al. (1983) studied this question.
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