Two-Dimensional Electrons in Field Effect Transistors

In deep submicron silicon MOSFETs, GaAs-based HEMTs, and in new emerging heterostructure systems, such as AlGaN/GaN, electrons forming a two-dimensional (2D) conducting channel exhibit new interesting effects that might find important device applications. Some of these effects are related to the space dependence of the electron mass. Other effects are linked to a large sheet electron concentration, when electrons behave not as a 2D gas but rather as a 2D electron electron fluid. We consider plasma effects in this fluid and discuss plasma wave electronic devices that rely on these effects. We also discuss the properties of 2D electrons in silicon devices, where plasma effects might also play an important role in deep submicron MOSFETs.