We report sizable variations in the carrier sheet concentration and consequently the mobility of the two-dimensional electron gas as a function of the thickness of the first GaAs buffer layer deposited on the substrate. The results are interpreted as being related to increased intersubband scattering. Band bending and modulation doping are suggested as the physical mechanisms responsible for the modulation of the carrier density. Preliminary data show the importance of an interaction between the superlattice buffer and Si impurity at the interface.
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Reynolds et al. (1992) studied this question.
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