Thermoelectric power in bismuth thin films

Theoretical expressions for the differential thermoelectrical power were calculated. The influence of the grain boundaries scattering on the kinetic parameters was taken into account. The expressions received were fit to the experimental data from measurements performed on bismuth thin films of thickness from 100 to about 7000 Å and in the temperature range from 77 to 400°K. The surface of the films and their structure were investigated with the electron microscope and X-ray diffractometer. From experiments and calculations the surface scattering parameter p, the grain boundaries scattering parameter h, the mean free path lB of the current carriers for different temperatures, and the size of the crystallites are determined. Also the percentage of the texturized crystallites in thin bismuth films was measured.