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Carrier temperature ( T C ) was estimated from the high-energy tails in the emission spectra for single-quantum-well laser diodes under pulsed operating conditions. The T C in the lasers with 100 and 120 Å thick-GaAs active layers rose appreciably as the injection current increased, while the T C remained at around the lattice temperature ( T L ) for the 250 Å laser. It was suggested that the increase of T C is essential to drive lasing-wavelength switching from the n =1 transition to the n =2 transition.
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Tokuda et al. (1986) studied this question.
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