Anisotropy of the transport properties of single-crystal Bi2 Te3 disordered by electron bombardment

Using single-crystal samples of Bi 2 Te 3 bombarded by 5-MeV electrons at a temperature of 250 K, we study the electrical resistivity and the Hall effect in the temperature range 1.7–370 K and the Shubnikov-de Haas effect at T =4.2 K in magnetic fields up to 14 T. We find that electron bombardment of Bi 2 Te 3 crystals results in a transition from the metallic p -type state to the metallic state with a Fermi surface. Annealing at 350 K eliminates the radiation defects and restores the p -type metallic conductance.