Analysis of the two‐rand hall effect and magnetoresistance

The variation of the values of Hall coefficient R and resistance ϱ as a function of magnetic field B is analysed for the case of an n‐type semiconductor with electrons in two different sets of conduction band minima. It is shown that both ϱ0/Δϱ and R0/ΔR should be linear functions of B−2 and that the parameters of the separate bands can be determined from the slope and intercept values of such graphs. The appropriate choice of experimental parameters to ensure the required accuracy of band parameters is discussed.