Fast ellipsometers have made feasible real-time assessment of heterostructure growth in a vapour phase ambient. A fast ellipsometer/MO-VPE experimental system is described and the possibilities of in situ ellipsometry are investigated in the case of GaAs-(Al, Ga)As structure growth : qualitative assessment in real-time and quantitative assessment (growth rate, composition determination and transition width) by experimental data processing after growth.
No takes yet. Share an insight, caveat, or question.
Laurence et al. (1981) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: