Experimental study demonstrates enhanced drive current and reduced defect traps in InGaAs n-MOSFETs treated with fluorine, indicating superior dielectric interface quality for advanced logic devices.
A study of fluorine (F) treatment on the electrical characteristics of In 0.53 Ga 0.47 As channel n-channel metal-oxide-semiconductor field effect transistors (n-MOSFETs) with metallorganic chemical vapor deposited HfAlO gate dielectric and silane and ammonia ( SiH 4 + NH 3 ) passivation is reported. X-ray photoelectron spectroscopy and secondary-ion mass spectrometry confirm the incorporation of F in the HfAlO gate dielectric after CF 4 plasma treatment. F was segregated near the high- k /InGaAs interface after postdeposition anneal. By introducing F treatment, further improvement in the subthreshold characteristics and hysteresis of the SiH 4 + NH 3 -passivated InGaAs MOSFETs was achieved, indicating a reduction in interface and bulk oxide trapped charges. The F-treated InGaAs MOSFETs demonstrated a significant improvement in drive current and effective carrier mobility, as compared to the control devices.
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Chin et al. (2010) studied this question.
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