In this paper, fluorine incorporation into the HfO2 gate dielectrics by post CF4 plasma treatment was proposed to improve the electrical characterization. TaN–HfO2–p-Si capacitors were demonstrated in this work. The characteristics of fluorinated HfO2 gate dielectrics were improved, including the capacitance-voltage hysteresis and current-voltage behaviors. This may be attributed to the fluorine incorporated into the HfO2 gate dielectrics as revealed by secondary ion mass spectroscopy. Moreover, the formation of Hf-F bonding was observed through electron spectroscopy for chemical analysis spectra.
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Lai et al. (2005) studied this question.
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