Characterization of Temperature Dependence for HfO[sub 2] Gate Dielectrics Treated in NH[sub 3] Plasma

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For the first time, the characteristics and temperature dependence of electrical properties for ultrathin gate dielectrics treated in plasma after deposition were investigated. After this treatment, significant nitrogen incorporation at the interface (interfacial layer) was examined by Auger electron spectroscopy. Moreover, the formation of bonding and the suppression of bonding were observed from electron spectroscopy for chemical analysis spectra. The activation energy of charge trapping reflected in the current-voltage characteristics was effectively reduced, which led to improved hysteresis and its weaker temperature dependence in gate dielectrics treated in plasma.