Interface charge and nonradiative carrier recombination in Ga2O3–GaAs interface structures

We have investigated the dual role of interfacial defects in creating both nonradiative interface recombination and interface charge. Our studies are based on Ga2O3–GaAs interface structures with their unique properties such as low interface state density and radiative GaAs band-to-band recombination. The self-consistent analysis of the steady-state dependence of the spontaneous GaAs emission on excitation density provides all critical characteristics of interfacial defects simultaneously: the density of interface states, their capture cross sections, the interface recombination velocities, and the oxide charge.