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Self-assembled monolayers (SAMs) of long-chain thiols were deposited on lattice-matched InGaAs layers grown on InP(100). A significant reduction of oxygen concentration on the surface and enhancement of the steady-state photoluminescence intensity was achieved. The base-collector dark current of In P ∕ In Ga As heterojunction bipolar transistors under reversed bias was reduced by three orders of magnitude by the SAMs. The passivation effect varied with the crystallographic orientation of the sidewalls of this layered device.
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Dassa et al. (2005) studied this question.
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