What question did this study set out to answer?

Evaluate whether chemical surface passivation can suppress peripheral nonradiative recombination and improve the current gain of GaAs/AlGaAs heterostructure bipolar transistors.

July 6, 1987Applied Physics Letters

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

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Authors

CSC. J. SandroffStevens Institute of Technology RNR.N. NottenburgUniversity of Southern California JBJ.C. BischoffCore Competence

Discussion

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Implication

Experimental study demonstrates a 60-fold current gain increase in GaAs/AlGaAs heterostructure bipolar transistors via sulfide passivation, highlighting broad utility for optoelectronic devices.

Key Points

Evaluate whether chemical surface passivation can suppress peripheral nonradiative recombination and improve the current gain of GaAs/AlGaAs heterostructure bipolar transistors.
Fabricated GaAs/AlGaAs heterostructure bipolar transistors.
Spin-coated thin films of hydrated sodium sulfide (Na2S·9H2O) onto the periphery of the fabricated devices to chemically passivate surface defects.
Achieved a 60-fold increase in transistor current gain at low collector currents following chemical passivation of peripheral nonradiative recombination centers.
Demonstrated effective neutralization of surface states, providing a low-temperature chemical treatment applicable to other III-V optoelectronic semiconductor devices.

Cite This Study

Sandroff et al. (1987) studied this question.

synapsesocial.com/papers/6a7e318dd2dab736758561f5 https://doi.org/10.1063/1.98877

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July 6, 1987Applied Physics Letters

Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation

View Full Paper

Ask AI

Bookmark

Authors

CSC. J. SandroffStevens Institute of Technology RNR.N. NottenburgUniversity of Southern California JBJ.C. BischoffCore Competence

Discussion

Member takes

Implication

Experimental study demonstrates a 60-fold current gain increase in GaAs/AlGaAs heterostructure bipolar transistors via sulfide passivation, highlighting broad utility for optoelectronic devices.

Key Points

Evaluate whether chemical surface passivation can suppress peripheral nonradiative recombination and improve the current gain of GaAs/AlGaAs heterostructure bipolar transistors.
Fabricated GaAs/AlGaAs heterostructure bipolar transistors.
Spin-coated thin films of hydrated sodium sulfide (Na2S·9H2O) onto the periphery of the fabricated devices to chemically passivate surface defects.
Achieved a 60-fold increase in transistor current gain at low collector currents following chemical passivation of peripheral nonradiative recombination centers.
Demonstrated effective neutralization of surface states, providing a low-temperature chemical treatment applicable to other III-V optoelectronic semiconductor devices.

Cite This Study

Sandroff et al. (1987) studied this question.

synapsesocial.com/papers/6a7e318dd2dab736758561f5 https://doi.org/10.1063/1.98877

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