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Free-exciton recombination emission of 235 nm in wavelength is obtained by current injection at room temperature from a diamond-based pn junction diode composed of B-doped crystal grown by high-temperature, high-pressure synthesis and a S-doped homoepitaxial layer grown by the chemical vapor deposition method. The diode shows a clear rectification characteristic and a high external quantum efficiency of excitonic emission, 8×10 -5 , which indicates that the excitonic emission of diamond is a good candidate for application to semiconductor UV-light-emitting devices. A defect-induced light emission and large leakage current indicate that a higher UV emission efficiency is expected with improvement of the junction quality.
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Horiuchi et al. (2001) studied this question.
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