The factors affecting the nucleation and growth of electron displacement damage in copper are investigated in a high voltage electron microscope. Under certain conditions large faulted loops (∼lμ) can be obtained. The contrast of the fault fringes enables them to be identified as interstitial in character. The first observation of the unfaulting reaction for extrinsic loops is reported.
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Iphoeski et al. (1969) studied this question.
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