Interstitial trapping and detrapping in electron irradiated dilute copper alloys

The interaction of migrating copper interstitials with impurities has been investigated by damage rate measurements in dilute copper alloys with Au, Be, Ge, Ni, Pd, Sb, Zn at irradiation temperatures between 50 and 170K. By applying the diffusion theory of the three dimensionally migrating interstitial to the data, the resistivity contribution of trapped interstitials and the capture radii of impurities for migrating interstitials has been determined. The above mentioned resistivity contribution was found to be independent of the impurity species and of irradiation temperature. The capture radii of all impurities decrease with increasing irradiation temperature and become zero at about 100K except that of Be. The cross section of a trapped interstitial to become detrapped is about 10 6 barn.