The polarization dependent temperature behavior of an InGaAsP/InP ridge waveguide structure designed for polarization insensitive semiconductor optical amplifier operation is investigated by means of measuring the threshold current of the diode in an external cavity configuration. In the wavelength range 1.48 μm<λ<1.57 μm and the temperature range 288 K<T<323 K, TE and TM show practically the same wavelength dependent threshold variation with temperature.
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Pajarola et al. (1994) studied this question.
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