Spectral sensitization of amorphous silicon by bromoindium phthalocyanine

The spectral sensitization of hydrogenated amorphous silicon by surface layers of bromoindium phthalocyanine and 1,1-bis(4-di-p-tolylaminophenyl)-cyclohexane has been investigated. By this technique, the long-wavelength edge of the photoconductive action spectrum can be extended by approximately 100 nm into the near infrared. The sensitization is explained by an exciton dissociation process within the phthalocyanine, followed by hole injection into the amorphous silicon.