Calculated Valence-Band Densities of States and Photoemission Spectra of Diamond and Zinc-Blende Semiconductors

Density-of-states calculations are presented based on band structures computed using the empirical pseudopotential method. Data from recent measurements of x-ray photoemission spectra and ultraviolet photoemission spectra are used to obtain the theoretical parameters. It was necessary to include a nonlocal pseudopotential to obtain consistency with experiment. Results for the density of states, including critical-point assignments and band structures, are given for Si, Ge, GaAs, InSb, GaP, ZnSe, and CdTe.