Answers are grounded in this paper and cite their sources.
The influence of quantum-well (QW) states formed in a Ru spacer layer on tunneling magnetoresistance (TMR) was investigated. A magnetic tunnel junction (MTJ) with a Ru spacer inserted between an AlOx tunnel barrier and one of the ferromagnetic Co₉₀Fe₁₀ layers was deposited on a single crystal MgO(110) substrate using an ultrahigh vacuum sputtering system. We clearly observe an oscillation of TMR ratios as a function of Ru thickness up to 1.70.3em0exnm with the same phase previously observed in an interlayer exchange coupling. The TMR ratios also oscillate and change their signs under both positive and negative bias voltage applications for the Ru thickness more than 1.30.3em0exnm. These periodical oscillations are caused by the oscillation of spin polarization derived from the contribution of QW states of up spin electrons confined in the Ru spacer layer to the spin-dependent electron transport.
No takes yet. Share an insight, caveat, or question.
Nozaki et al. (2004) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: