Radiation-induced interface traps in MOS devices: capture cross section and density of states of P/sub b1/ silicon dangling bond centers

P/sub b/ centers dominate radiation-induced interface defects. On the (100) Si/SiO/sub 2/ interface, the P/sub b0/ center dominates radiation damage, but another center, the P/sub b1/, plays a secondary role. Neither the electronic density of states nor the capture cross section of this center are well established. This study provides information about both the density of states and capture cross section of P/sub b1/. The study also shows that some refinement is required in techniques utilized to separate interface trap space charge from space charge in the oxide.