Intensity dependence of the minority-carrier diffusion length in amorphous silicon based alloys

In this paper we present results showing the intensity dependence of the minority-carrier diffusion length in an amorphous silicon-based alloy. A theoretical analysis shows that this dependence can be related to the energy dependence of the density of states near the valence band, which assumed to be exponential, has a characteristic energy of approximately 240 mV around 1.2 eV below the conduction band edge.