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Equations are formulated for the distribution of photo-electrons and photo-holes in an intrinsic material. From the results for the photovoltaic effect it is shown that a value for the ambipolar diffusion length and hence the carrier lifetime may be obtained from the spectral sensitivity curve. Surface recombination is shown to have a marked effect on the magnitude and spectral distribution of the photoconductive response. Prom these two effects two estimates of the surface recombination velocity are made, both giving values near 5 × 104cm/sec.
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T. S. Moss (1955) studied this question.
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